Technologies and Devices International Inc (TDI) of Silver Spring, MD, USA has been awarded US Patent number 7,279,047 B2, the latest in a series of patents covering production equipment for manufacturing
low-defect nitride semiconductor materials, particularly bulk gallium nitride (GaN) and aluminum gallium nitride (AlGaN) substrates.
The new patent ‘Reactor for extended duration growth of gallium containing single crystals’ relates to crystal growth equipment for fabricating GaN and AlGaN single-crystal materials using a modified hydride vapor
phase epitaxial (HVPE) process.
The new production tool facilitates a long-lasting high-growth-rate process for high-quality GaN and AlGaN single-crystal materials (for fabricating blue and green LEDs and laser diodes, and optoelectronic devices
operating in ultraviolet spectral region, respectively).
“This equipment will enable significant improvements in quality, stability and efficiency of crystal growth technology,” says president and CEO Vladimir Dmitriev. “It will be applied to fabrication of a variety of products,
including multi-wafer manufacturing of free-standing and bulk GaN substrates, particularly for solid-state lighting applications. Fabrication of low-cost low-defect GaN substrates is the key for rapid penetration of
solid-state lighting,” he adds.
The patent adds to TDI’s intellectual property portfolio, which includes more than 30 issued and pending US and international patents and covers crystal growth methods, growth equipment, and materials invented at
TDI for various compound semiconductor materials as well as epitaxial device structures.